10ETFS datasheet(2/7 Pages) VISHAY

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Document Number: 93134

Revision: 22-Oct-08

10ETF..S Soft Recovery Series

Vishay High Power Products

Fast Soft Recovery

Rectifier Diode, 10 A

Note

(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W

For recommended footprint and soldering techniques refer to application note #AN-994

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

VFM

10 A, TJ = 25 °C

1.2

Forward slope resistance

TJ = 150 °C

12.7

Threshold voltage

VF(TO)

1.25

Maximum reverse leakage current

IRM

TJ = 25 °C

VR = Rated VRRM

0.1

TJ = 150 °C

2.0

RECOVERY CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Reverse recovery time

trr

IF at 10 Apk

25 A/µs

25 °C

145

Reverse recovery current

Irr

2.75

Reverse recovery charge

Qrr

0.32

µC

Snap factor

0.6

dir

RM(REC)

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

TJ, TStg

- 40 to 150

°C

Maximum thermal resistance

junction to case

RthJC

DC operation

1.5

°C/W

Maximum thermal resistance

junction to ambient (PCB mount)

RthJA (1)

Soldering temperature

240

°C

Approximate weight

0.07

oz.

Marking device

Case style D2PAK (SMD-220)

10ETF02S

10ETF04S

10ETF06S

10ETFS Datasheet(PDF) 2 Page - Vishay Siliconix

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