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SA57608 Datasheet(PDF) 4 Page - NXP Semiconductors |
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SA57608 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 10 page ![]() Philips Semiconductors Product data SA57608 One-cell Lithium-ion battery protection with over/undercharge and overcurrent protection 2003 Oct 29 4 ELECTRICAL CHARACTERISTICS Characteristics measured with Tamb = 25 °C, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDD1 Operating input voltage VCC – GND; Voltage defined as VDD to VM 1.5 – 10 V IDD Supply current VCC = 3.9 V; VM = 0 V – 3.0 8.0 mA ISLP Sleep current VCC = 2.0 V – 0.3 0.6 mA VDD(min) Minimum operating voltage for 0 V charging VCC – GND – – 1.2 V SA57608Y 4.30 4.35 4.40 V SA57608B 4.255 4.280 4.305 V VO( ) Over charge voltage threshold Tamb = 0 °C ∼ 50 °C; SA57608C 4.27 4.295 4.32 V VOV1(th) Over-charge voltage threshold amb VBATT : L → H SA57608D 4.30 4.350 4.40 V SA57608E 4.25 4.275 4.3 V SA57608G 4.255 4.280 4.305 V SA57608Y – 180 – mV SA57608B – 180 – mV VO( ) Over charge hysteresis VCC :H → L SA57608C – 150 – mV VOV1(hyst) Over-charge hysteresis VCC : H → L SA57608D – 180 – mV SA57608E – 200 – mV SA57608G – 200 – mV SA57608Y 2.23 2.30 2.37 V SA57608B 2.242 2.30 2.358 V V () Over discharge threshold voltage VCC :H → L SA57608C 2.242 2.30 2.358 V VUV(th) Over-discharge threshold voltage VCC : H → L SA57608D 2.23 2.30 2.37 V SA57608E 2.242 2.30 2.358 V SA57608G 2.242 2.30 2.358 V SA57608Y 120 150 180 mV SA57608B 45 75 105 mV VOC ( ) Overcurrent threshold V :L → H SA57608C 170 200 230 mV VOC1(th) Overcurrent threshold VVM : L → H SA57608D 170 200 230 mV SA57608E 70 100 130 mV SA57608G 70 100 130 mV VOV(rel) Release voltage for over-discharge 4.12 4.17 4.22 V tOV(DLY) Over-charge delay time CTD = 0.01 µF; VCC = 4.0 V to 4.4 V 61 77 93 ms tOV Over-discharge delay time VCC = 3.6 V to 2.2 V 5 8 11 ms tOC(DLY) Over-current delay time VM : 0 V → 0.5 V 9 13 17 ms VOC2 Short protection voltage VCC = 3.0 V VCC–1.2 VCC–0.9 VCC–0.6 V tDLY(SC) Short detect delay time VCC = 3.0 V – 5 50 ms RSC Reset resistance for excess current protection VCC = 3.6 V; VM = 1.0 V 50 100 150 kW VCFET(off) Nch ON voltage of CFET IOL = 50 mA; VCC = 4.4 V – 0.35 0.5 V VCFET(on) Pch ON voltage of CFET IOH = 50 mA; VCC = 3.9 V 3.4 3.7 – V VDFET(off) Nch ON voltage of DFET IOL = 50 mA; VCC = 2.2 V – 0.2 0.5 V VDFET(on) Pch ON voltage of DFET IOH = 50 mA; VCC = 3.9 V 3.4 3.7 – V |
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