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SA57608 Datasheet(PDF) 4 Page - NXP Semiconductors

Part # SA57608
Description  One-cell Lithium-ion battery protection with over/undercharge and overcurrent protection
PDF  10 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

SA57608 Datasheet(HTML) 4 Page - NXP Semiconductors

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Philips Semiconductors
Product data
SA57608
One-cell Lithium-ion battery protection with
over/undercharge and overcurrent protection
2003 Oct 29
4
ELECTRICAL CHARACTERISTICS
Characteristics measured with Tamb = 25 °C, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDD1
Operating input voltage
VCC – GND; Voltage defined as VDD to VM
1.5
–
10
V
IDD
Supply current
VCC = 3.9 V; VM = 0 V
–
3.0
8.0
mA
ISLP
Sleep current
VCC = 2.0 V
–
0.3
0.6
mA
VDD(min)
Minimum operating voltage for 0 V
charging
VCC – GND
–
–
1.2
V
SA57608Y
4.30
4.35
4.40
V
SA57608B
4.255
4.280
4.305
V
VO( )
Over charge voltage threshold
Tamb = 0 °C ∼ 50 °C;
SA57608C
4.27
4.295
4.32
V
VOV1(th)
Over-charge voltage threshold
amb
VBATT : L → H
SA57608D
4.30
4.350
4.40
V
SA57608E
4.25
4.275
4.3
V
SA57608G
4.255
4.280
4.305
V
SA57608Y
–
180
–
mV
SA57608B
–
180
–
mV
VO(
)
Over charge hysteresis
VCC :H → L
SA57608C
–
150
–
mV
VOV1(hyst)
Over-charge hysteresis
VCC : H → L
SA57608D
–
180
–
mV
SA57608E
–
200
–
mV
SA57608G
–
200
–
mV
SA57608Y
2.23
2.30
2.37
V
SA57608B
2.242
2.30
2.358
V
V
()
Over discharge threshold voltage
VCC :H → L
SA57608C
2.242
2.30
2.358
V
VUV(th)
Over-discharge threshold voltage
VCC : H → L
SA57608D
2.23
2.30
2.37
V
SA57608E
2.242
2.30
2.358
V
SA57608G
2.242
2.30
2.358
V
SA57608Y
120
150
180
mV
SA57608B
45
75
105
mV
VOC ( )
Overcurrent threshold
V
:L
→ H
SA57608C
170
200
230
mV
VOC1(th)
Overcurrent threshold
VVM : L → H
SA57608D
170
200
230
mV
SA57608E
70
100
130
mV
SA57608G
70
100
130
mV
VOV(rel)
Release voltage for over-discharge
4.12
4.17
4.22
V
tOV(DLY)
Over-charge delay time
CTD = 0.01 µF; VCC = 4.0 V to 4.4 V
61
77
93
ms
tOV
Over-discharge delay time
VCC = 3.6 V to 2.2 V
5
8
11
ms
tOC(DLY)
Over-current delay time
VM : 0 V
→ 0.5 V
9
13
17
ms
VOC2
Short protection voltage
VCC = 3.0 V
VCC–1.2
VCC–0.9
VCC–0.6
V
tDLY(SC)
Short detect delay time
VCC = 3.0 V
–
5
50
ms
RSC
Reset resistance for excess current
protection
VCC = 3.6 V; VM = 1.0 V
50
100
150
kW
VCFET(off)
Nch ON voltage of CFET
IOL = 50 mA; VCC = 4.4 V
–
0.35
0.5
V
VCFET(on)
Pch ON voltage of CFET
IOH = 50 mA; VCC = 3.9 V
3.4
3.7
–
V
VDFET(off)
Nch ON voltage of DFET
IOL = 50 mA; VCC = 2.2 V
–
0.2
0.5
V
VDFET(on)
Pch ON voltage of DFET
IOH = 50 mA; VCC = 3.9 V
3.4
3.7
–
V



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