SI7850DP datasheet(2/4 Pages) VISHAY

2 / 4 page

Si7850DP

Vishay Siliconix

New Product

www.vishay.com

Document Number: 71625

S-03828—Rev. A, 28-May-01

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

VDS = 60 V, VGS = 0 V

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V, TJ = 55_C

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

VGS = 10 V, ID = 10.3 A

0.018

0.022

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 8.7 A

0.025

0.031

Forward Transconductancea

gfs

VDS = 15 V, ID = 10.3 A

Diode Forward Voltagea

VSD

IS = 3.8 A, VGS = 0 V

0.85

1.2

Dynamicb

Total Gate Charge

Gate-Source Charge

Qgs

VDS = 30 V, VGS = 10 V, ID = 10.3 A

3.4

Gate-Drain Charge

Qgd

5.3

Gate-Resistance

1.4

Turn-On Delay Time

td(on)

Rise Time

= 30 V, R = 30

Turn-Off Delay Time

td(off)

VDD = 30 V, RL = 30 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = 3.8 A, di/dt = 100 A/ms

Notes

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

012345

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 10 thru 5 V

TC = 150_C

4 V

–55

3 V

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

SI7850DP Datasheet(PDF) 2 Page - Vishay Siliconix

SI7850DP Datasheet(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4

Datasheet Download

Link URL