SI7868DP datasheet(2/4 Pages) VISHAY

2 / 4 page

Si7868DP

Vishay Siliconix

New Product

www.vishay.com

Document Number: 71849

S-03130—Rev. B, 22-Jan-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.6

1.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "16 V

"100

VDS = 16 V, VGS = 0 V

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V, TJ = 55_C

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

VGS = 10 V, ID = 29 A

0.0018

0.00225

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 25 A

0.0022

0.00275

Forward Transconductancea

gfs

VDS = 6 V, ID = 29 A

Diode Forward Voltagea

VSD

IS = 4.5 A, VGS = 0 V

0.63

1.1

Dynamicb

Total Gate Charge

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V, ID = 29 A

Gate-Drain Charge

Qgd

Gate Resistance

1.2

Turn-On Delay Time

td(on)

Rise Time

VDD = 10 V, RL = 10 W

Turn-Off Delay Time

td(off)

VDD = 10 V, RL = 10 W

ID ^ 1 A, VGEN = 4.5 V, RG = 6 W

150

240

Fall Time

110

Source-Drain Reverse Recovery Time

trr

IF = 2.9 A, di/dt = 100 A/ms

100

Notes

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

012345

VGS = 10 thru 3 V

TC = 125_C

-55

2 V

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

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