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2SC1815 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC1815 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 4 page ![]() Production specification Silicon Epitaxial Planar Transistor 2SC1815 C019 www.gmicroelec.com Rev.A 1 FEATURES High voltage and high current VCEO=50V(Min),IC=150mA(Max). Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) Low noise. Complementary to 2SA1015. APPLICATIONS SOT-23 Audio frequency general purpose amplifier applications. ORDERING INFORMATION Type No. Marking Package Code 2SC1815 HF SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA IB Base Current 50 mA PC Collector Dissipation 400 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ Pb Lead-free |
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