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2SC4180 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC4180 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 3 page ![]() Production specification Silicon Epitaxial Planar Transistor 2SC4180 F040 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 120 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=120V,IE=0 0.05 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.05 μA DC current gain hFE VCE=6V,IC=1mA VCE=6V,IC=1mA 135 100 900 Collector-emitter saturation voltage VCE(sat) IC=10mA,IB=1mA 0.3 V Base-emitter voltage VBE VCE=6V,IC=1mA 0.55 0.65 V Transition frequency fT VCE=6V, IE=1mA 50 MHz Collector output capacitance Cob VCB=30V,IE=0,f=1MHz 2.5 pF CLASSIFICATION OF hFE Range 135-270 200-400 300-600 450-900 Marking D15 D16 D17 D18 |
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