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2SC4102 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Part # 2SC4102
Description  Silicon Epitaxial Planar Transistor
PDF  3 Pages
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Manufacturer  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

2SC4102 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

  2SC4102 Datasheet HTML 1Page - Galaxy Semi-Conductor Holdings Limited 2SC4102 Datasheet HTML 2Page - Galaxy Semi-Conductor Holdings Limited 2SC4102 Datasheet HTML 3Page - Galaxy Semi-Conductor Holdings Limited  
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Production specification
Silicon Epitaxial Planar Transistor
2SC4102
F037
www.gmicroelec.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX UNIT
Collector-base breakdown
voltage
V(BR)CBO
IC=50μA,IE=0
120
V
Collector-emitter breakdown
voltage
V(BR)CEO
IC=1mA,IB=0
120
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=100V,IE=0
0.5
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.5
μA
DC current gain
hFE
VCE=6V,IC=2mA
120
560
Collector-emitter saturation
voltage
VCE(sat)
ICE=10mA,IB=1mA
0.5
V
Transition frequency
fT
VCE=12V, IC= 2mA,f=100MHz
140
MHz
Collector output capacitance
Cob
VCB=12V,IE=0,f=1MHz
2.5
pF
CLASSIFICATION OF hFE
Rank
P
R
S
Range
120-270
180-390
270-560
Marking
TP
TR
TS



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