IRF610SPBF. datasheet(3/8 Pages) VISHAY

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IRF610S, SiHF610S, IRF610L, SiHF610L

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Vishay Siliconix

S15-1659-Rev. D, 20-Jul-15

Document Number: 91024

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

91024_01

20 µs Pulse Width

C = 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

100

101

100

10-1

Bottom

Top

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

100

10-1

100

101

VDS, Drain-to-Source Voltage (V)

4.5 V

Bottom

Top

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

C = 150 °C

91024_02

10-1

20 µs Pulse Width

DS = 50 V

100

10-1

VGS, Gate-to-Source Voltage (V)

789

91024_03

10-2

D = 3.3 A

GS = 10 V

3.5

0.0

1.0

1.5

2.0

2.5

3.0

TJ, Junction Temperature (°C)

91024_04

- 60 - 40 - 20 0

20 40 60 80 100 120 140 160

0.5

91024_05

300

250

200

150

100

101

VDS, Drain-to-Source Voltage (V)

GS = 0 V, f = 1 MHz

iss = Cgs + Cgd, Cds Shorted

rss = Cgd

oss = Cds + Cgd

iss

rss

oss

91024_06

QG, Total Gate Charge (nC)

D = 3.3 A

For test circuit

see figure 13

DS = 40 V

DS = 100 V

DS = 160 V

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