Transistors

1

Publication date: February 2003

SJC00186BED

2SC5632

Silicon NPN epitaxial planar type

For high-frequency amplification and switching

■ Features

• High transition frequency f

T

• S-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

= 100 µA, I

E

= 015

V

Emitter-base cutoff current (Collector open)

µA

Forward current transfer ratio

100

350



∆h

FE

= 4 V, I

C

= 100 µA

0.6

1.5



Collector-emitter saturation voltage

0.1

V

Transition frequency

= 5 V, I

C

= 15 mA, f = 200 MHz

0.6

1.1

GHz

Collector output capacitance

= 10 V, I

E

= 0, f = 1 MHz

1.0

1.6

pF

(Common base, input open circuited)

■ Electrical Characteristics T

a

= 25°C ± 3°C

Unit: mm

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

15

V

Collector-emitter voltage (Base open)

8V

Emitter-base voltage (Collector open)

3V

Collector current

50

mA

Collector power dissipation

150

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Marking Symbol: 2R

0.3

+0.1

–0.0

1

3

2

(0.65) (0.65)

0.15

+0.10

–0.05

10˚

1: Base

2: Emitter

3: Collector

EIAJ: SC-70

SMini3-G1 Package

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *:

∆h