SIE802DF datasheet(4/10 Pages) VISHAY

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Document Number: 72985

S09-1337-Rev. E, 13-Jul-09

Vishay Siliconix

SiE802DF

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

VSD - Source-to-Drain Voltage (V)

1.0

100

0.0

0.2

0.4

0.6

0.8

TJ = 25 °C

TJ = 150 °C

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0246

ID = 23.6 A

VGS - Gate-to-Source Voltage (V)

TA = 25 °C

TA = 125 °C

0.0040

0.0035

0.0030

0.0025

0.0020

0.0015

0.0010

Time (s)

1000

0.1

0.01

100

Safe Operating Area, Junction-to-Ambient

1000

0.1

100

0.01

0.1

TA = 25 °C

Single Pulse

100

Limited

by RDS(on)*

1 ms

10 ms

100 ms

1 s

10 s

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

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