SIS452DN datasheet(3/13 Pages) VISHAY

3 / 13 page

Document Number: 65705

S10-0215-Rev. A, 25-Jan-10

www.vishay.com

Vishay Siliconix

SiS452DN

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VDS - Drain-to-Source Voltage (V)

VGS = 10 V thru 4 V

VGS = 3 V

VGS = 2 V

0.001

0.002

0.003

0.004

0.005

020

100

ID - Drain Current (A)

VGS = 4.5 V

VGS = 10 V

Qg - Total Gate Charge (nC)

ID = 20 A

VDS = 3 V

VDS = 9.6 V

VDS = 6 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.5

1.0

1.5

2.0

2.5

VGS - Gate-to-Source Voltage (V)

TC = 125 °C

TC = 25 °C

TC = - 55 °C

300

600

900

1200

1500

1800

2100

036

VDS - Drain-to-Source Voltage (V)

Ciss

Coss

Crss

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

- 50

- 25

100

125

150

TJ - Junction Temperature (°C)

ID = 20 A

VGS = 10 V,4.5 V

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