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ASI30217 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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ASI30217 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1 Specifications are subject to change without CHARACTERISTICS TC = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VBR IR = 10 µA 150 V VF IF = 100 mA 1.0 V ττττ IF = 50 mA IR = 250 mA 400 µµµµS IL IF = 0 mA PIN = 0 dBm f = 10 GHz 0.5 dB IL IF = 100 mA PIN = 0 dBm f = 10 GHz 20 dB VSWR IF = 0 mA PIN = 0 dBm f = 10 GHz 1.5:1 --- MICROSTRIP/STRIPLINE PIN DIODE SWITCH 5082-3170 DESCRIPTION: The ASI 5082-3170 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 to 18 GHz. FEATURES INCLUDE: • Direct Replacement for HP 5082-3170 • Isolation = 20 dB min. at 10 GHz • Hermetic Package MAXIMUM RATINGS IF 250 mA VR 150 V PDISS 1.75 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +150 °C θθθθ JC 72 °C/W PACKAGE STYLE M-50 ORDER CODE: ASI30217 Cathode |
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