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S9013 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Part # S9013
Description  NPN Silicon Epitaxial Planar Transistor
PDF  4 Pages
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Manufacturer  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

S9013 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

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Production specification
NPN Silicon Epitaxial Planar Transistor
S9013
C082
www.gmicroelec.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=0.1mA,IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=40V,IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=20V,IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
VCE=1V,IC=50mA
120
400
DC current gain
hFE
VCE=1V,IC=500mA
40
Collector-emitter saturation voltage
VCE(sat)
IC=500mA, IB= 50mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=500mA, IB= 50mA
1.2
V
Transition frequency
fT
VCE=6V, IC= 20mA
f=30MHz
150
MHz
CLASSIFICATION OF hFE(1)
Rank
L
H
J
Range
120-200
200-350
300-400



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