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2SA1577 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Part # 2SA1577
Description  PNP Silicon Epitaxial Planar Transistor
PDF  4 Pages
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Manufacturer  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

2SA1577 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

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Production specification
PNP Silicon Epitaxial Planar Transistor
2SA1577
F030
www.gmicroelec.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA,IE=0
-40
-
-
V
Collector-emitter breakdown
voltage
V(BR)CEO
IC=-1mA,IB=0
-32
-
-
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA,IC=0
-5
-
-
V
Collector cut-off current
ICBO
VCB=-20V,IE=0
-
-
-1
μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-
-
-1
μA
DC current gain
hFE
VCE=-3V,IC=-100mA
82
-
390
Collector-emitter saturation voltage
VCE(sat)
IC=-300mA, IB=-30mA
-
-
-0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=-300mA, IB=-300mA
-
-
-1.1
V
Transition frequency
fT
VCE=-5V, IE= 20mA
f=100MHz
-
200
-
MHz
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
-
7
-
pF
CLASSIFICANTION OF hFE
Rank
P
Q
R
Range
82-120
120-270
180-390
marking
HP
HQ
HR



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