ADG636 datasheet(2/12 Pages) AD

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REV. 0

–2–

ADG636–SPECIFICATIONS

–40 C to

Parameter

+25 C

+85 C

+125 C

Unit

Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

VSS to VDD

VDD = +4.5 V, VSS = –4.5 V

On Resistance (RON)85

Ω typ

VS =

±3 V, I

S = –1 mA,

115

140

160

Ω max

Test Circuit 1

On Resistance Match Between

Channels (DRON)2

Ω typ

VS =

±3 V, I

S = –1 mA

5.5

6.5

Ω max

On Resistance Flatness (RFLAT(ON))25

Ω typ

VS =

±3 V, I

S = –1 mA

Ω max

LEAKAGE CURRENTS

VDD = +5.5 V, VSS = –5.5 V

Source OFF Leakage IS (OFF)

±0.01

nA typ

VS =

±4.5 V, V

D =

4.5 V,

±0.1

±0.25

± 2

nA max

Test Circuit 2

Drain OFF Leakage ID (OFF)

±0.01

nA typ

VS =

±4.5 V, V

D =

4.5 V,

±0.1

±0.25

± 2

nA max

Test Circuit 2

Channel ON Leakage ID, IS (ON)

±0.01

nA typ

VS = VD =

± 4.5 V, Test Circuit 3

±0.1

±0.25

± 6

nA max

DIGITAL INPUTS

Input High Voltage, VINH

2.4

V min

Input Low Voltage, VINL

0.8

V max

Input Current

IINL or IINH

0.005

µA typ

VIN = VINL or VINH

±0.1

µA max

CIN, Digital Input Capacitance

pF typ

DYNAMIC CHARACTERISTICS

Transition Time

ns typ

VS1A = +3 V, VS1B = –3 V, RL = 300

Ω,

100

120

150

ns max

CL = 35 pF, Test Circuit 4

tON Enable

100

ns typ

RL = 300

Ω, C

L = 35 pF

135

170

190

ns max

VS = 3 V, Test Circuit 5

tOFF Enable

ns typ

RL = 300

Ω, C

L = 35 pF

100

ns max

VS = 3 V, Test Circuit 5

Break-Before-Make Time Delay, tBBM

ns typ

RL = 300

Ω, C

L = 35 pF,

ns min

VS = 3 V, Test Circuit 5

Charge Injection

–1.2

pC typ

VS = 0 V, RS = 0

Ω,C

L = 1 nF,

Test Circuit 7

Off Isolation

–65

dB typ

RL = 50

Ω, C

L = 5 pF, f = 10 MHz,

Test Circuit 8

Channel-to-Channel Crosstalk

–65

dB typ

RL = 50

Ω, C

L = 5 pF, f = 10 MHz,

Test Circuit 10

Bandwidth –3 dB

610

MHz typ

RL = 50

Ω, C

L = 5 pF, Test Circuit 9

CS (OFF)

pF typ

f = 1 MHz

CD (OFF)

pF typ

f = 1 MHz

CD, CS (ON)

pF typ

f = 1 MHz

POWER REQUIREMENTS

VDD = +5.5 V, VSS = –5.5 V

IDD

0.001

µA typ

Digital Inputs = 0 V or 5.5 V

1.0

µA max

ISS

0.001

µA typ

Digital Inputs = 0 V or 5.5 V

1.0

µA max

NOTES

1Y Version Temperature Range: –40

°C to +125°C

2Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

DUAL SUPPLY1 (V

DD = 5 V

10%, VSS = –5 V

10%, GND = 0 V. All specifications –40 C to +125 C unless noted.)

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