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AM29LV033C Datasheet(PDF) 35 Page - Advanced Micro Devices |
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AM29LV033C Datasheet(HTML) 35 Page - Advanced Micro Devices |
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35 / 48 page ![]() 34 Am29LV033C AC CHARACTERISTICS Erase/Program Operations Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. Parameter Speed Option JEDEC Std Description -70 -90 -120 Unit t AVAV t WC Write Cycle Time (Note 1) Min 70 90 120 ns t AVWL t AS Address Setup Time Min 0 ns t WLAX t AH Address Hold Time Min 45 45 50 ns t DVWH t DS Data Setup Time Min 35 45 50 ns t WHDX t DH Data Hold Time Min 0 ns t OES Output Enable Setup Time (Note 1) Min 0 ns t GHWL t GHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns t ELWL t CS CE# Setup Time Min 0 ns t WHEH t CH CE# Hold Time Min 0 ns t WLWH t WP Write Pulse Width Min 30 45 50 ns t WHWL t WPH Write Pulse Width High Min 30 ns t WHWH1 t WHWH1 Programming Operation (Note 2) Typ 9 µs t WHWH1 t WHWH1 Accelerated Programming Operation (Note 2) Typ 7 µs t WHWH2 t WHWH2 Sector Erase Operation (Note 2) Typ 0.7 sec t VCS V CC Setup Time (Note 1) Min 50 µs t RB Recovery Time from RY/BY# Min 0 ns t BUSY Program/Erase Valid to RY/BY# Delay Min 90 ns |
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