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PXT2222A Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Part # PXT2222A
Description  NPN Switching Transistor
PDF  4 Pages
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Manufacturer  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

PXT2222A Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

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Production specification
NPN Switching Transistor
PXT2222A
E099
www.gmicroelec.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=10μA, IE=0
75
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA ,IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10μA, IC=0
6
V
Collector cut-off current
ICBO
VCB=60V, IE=0
10
nA
Emitter cut-off current
IEBO
VEB=5V,IC=0
10
nA
DC current gain
hFE
VCE=10V, IC=0.1mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=1V, IC=150mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
35
50
75
50
100
40
300
Collector-emitter saturation voltage
VCE(sat)
IC=150mA ,IB=15mA
IC=500mA ,IB=50mA
0.3
1
V
Base-emitter saturation voltage
VBE(sat)
IC=150mA, IB=15mA
IC=500mA ,IB=50mA
0.6
1.2
2
V
Transition frequency
fT
VCE=10V,IC=20mA,
f=100MHz
300
MHz
Collector Capacitance
Cc
VCB=10V, f=1MHz ,IE=0
8
pF
Emitter Capacitance
Ce
VEB=10V, f=1MHz ,IC=0
25
pF
Noise Figure
F
IC=200uA,VCE=5V,RS=2kΩ
F=1kHz,B=200Hz
4
dB



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