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HM879 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Part # HM879
Description  SILICON PNP EPITAXIAL TYPE TRANSISTOR
PDF  3 Pages
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Manufacturer  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

HM879 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

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Production specification
SILICON PNP EPITAXIAL TYPE TRANSISTOR
HM879
E079
www.gmicroelec.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=10μA,IE=0
30
V
Collector-emitter breakdown voltage V(BR)CEO
IC=1mA,IB=0
10
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10μA,IC=0
6
V
Collector to Emitter Voltage
V(BR)CEX
IC=1mA,VBE=3V
20
V
Collector cut-off current
ICBO
VCB=20V,IE=0
100
nA
Emitter cut-off current
IEBO
VEB=4V,IC=0
100
nA
DC current gain
hFE
VCE=2V,IC=3A
140
210
400
Collector-emitter saturation voltage
VCE(sat)
IC=3A, IB= 60mA
0.3
0.4
V
Transition frequency
fT
VCE=10V, IC= 50mA
200
MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
30
pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified



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