FCX591 datasheet(2/3 Pages) BILIN

Part #	FCX591

Description	PNP Silicon Planar Medium Power High Perormance Transistor

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	BILIN [Galaxy Semi-Conductor Holdings Limited]

Direct Link	http://www.galaxycn.com

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2 / 3 page

Production specification

PNP Silicon Planar Medium Power High Perormance Transistor

FCX591

E074

www.gmicroelec.com

Rev.A

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-100μA,IE=0

-80

Collector-emitter breakdown voltage V(BR)CEO

IC=-10mA,IB=0

-60

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA,IC=0

-5

Collector cut-off current

ICBO

VCB=-60V

-100

Collector-Emitter Cut-Off Current

ICES

VCES=-60V

-100

Emitter cut-off current

IEBO

VEB=-3V,IC=0

-100

DC current gain

hFE

VCE=-5V,IC=-1mA

VCE=-5V,IC=-500mA

VCE=-5V,IC=-1A

VCE=-5V,IC=-2A

100

300

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA, IB= -50mA

IC=-1A, IB= -100mA

-0.3

-0.6

Base-emitter saturation voltage

VBE(sat)

IC=-1A, IB= -100mA

-1.2

Base-emitter Turn-on Voltage

VBE(on)

IC=-1A,VCE=-5V

-1.0

Transition frequency

VCE=-10V, IC= -50mA,

f=100MHz

150

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

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