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BST50 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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BST50 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 3 page  Production specification NPN Darlington Transistor BST50;BST51;BST52 E073 www.gmicroelec.com Rev.A 1 FEATURES High current(max.0.5A). High voltage(max.80v). Integrated diode and resistor. PNP complements:BST60,BST61 AND BST62. APPLICATIONS Industrial switching applications such as: -Print hammer -Solenoid SOT-89 -Relay and lamp driving ORDERING INFORMATION Type No. Marking Package Code BST50 AS1 SOT-89 BST51 AS2 SOT-89 BST52 AS3 SOT-89 MAXIMUM RATING @ Ta=25 ℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage BST50 BST51 BST52 60 80 90 V VCEO Collector-Emitter Voltage BST50 BST51 BST52 45 60 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current -DC 1 A ICM Peak Collector Current 2 A IB Base Current 100 mA Ptot Total powerDissipation 1.3 W Tj,Tstg Junction and Storage Temperature -65 to +150 ℃ Pb Lead-free |
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