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2SC4627 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC4627 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 4 page ![]() Production specification NPN High-frequency Transistor 2SC4627 H034 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 3 V DC current gain hFE VCB=6V,IE=-1mA 40 260 Base-emitter voltage VBE VCB=6V,IE=-1mA 0.72 V Transition frequency fT VCE=12V, IE=-1mA,f=200MHz 450 650 MHz Common-collector reverse transfer capacitance Cre VCB=6V, IE=-1mA,f=10.7MHz 0.8 1 Pf CLASSIFICATION OF HFE RANK B C D RANGE 40-110 65-160 100-260 |
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