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2SC5585 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC5585 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 4 page ![]() Production specification LOW FREQUENCY TRANSISTOR 2SC5585 H030 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage BVCBO IC=10uA 15 V Collector-emmitter breakdown voltage BVCEO IC=1mA 12 V Emitter-base breakdown voltage BVEBO IE=10uA 6 V Collector cut-off current ICBO VCB=15V,IE=0 0.1 μA Emitter cut-off current IEBO VCB=6V,IE=0 0.1 μA DC current gain hFE VCE=2V,IC=10mA 270 680 Collector-emitter saturation voltage VCE(sat) IC=200mA, IB=10mA 0.09 0.25 V Transition frequency fT VCE=2V, IE=-10mA, f=100MHz 320 MHz Collector output capacitance Cob VCB=10V, IE=0mA,f=1MHz 7.5 pF |
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