NTMFS5C404N

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2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

40

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

19.7

mV/

°C

Zero Gate Voltage Drain Current

10

mA

250

Gate−to−Source Leakage Current

100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

2.0

4.0

V

Threshold Temperature Coefficient

−6.2

mV/

°C

Drain−to−Source On Resistance

0.57

0.7

m

W

Forward Transconductance

210

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

8400

pF

Output Capacitance

4600

Reverse Transfer Capacitance

120

Total Gate Charge

128

nC

Threshold Gate Charge

22

Gate−to−Source Charge

35

Gate−to−Drain Charge

26

Plateau Voltage

4.3

V

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

16

ns

Rise Time

113

Turn−Off Delay Time

77

Fall Time

109

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.76

1.2

V

0.63

Reverse Recovery Time

96

ns

Charge Time

49

Discharge Time

47

Reverse Recovery Charge

189

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width

v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.