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2SC2883 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC2883 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 3 page  Production specification NPN Silicon Epitaxial Planar Transistor 2SC2883 E051 www.gmicroelec.com Rev.A 1 FEATURES Suitable for output stage of 3 watts amplifier. Small flat package. PC=1.0 to 2.0W. Complements the 2SA1203. SOT-89 ORDERING INFORMATION Type No. Marking Package Code 2SC2883 GO/GY SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A IB Base Current 0.3 A PC Collector Dissipation 500 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ Pb Lead-free |
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