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2SA1213 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SA1213 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 4 page ![]() Production specification Silicon Planar Epitaxial Transistor 2SA1213 E040 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -50 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA VCE=-2V,IC=-0.5A 70 240 DC current gain hFE VCE=-2V,IC=-2.0A 20 Collector-emitter saturation voltage VCE(sat) IC=-1A,IB=-0.05A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-1A,IB=-0.05A -1.2 V Transition frequency fT VCE=-2V, IC=-0.5A 120 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 40 pF CLASSIFICATION OF hFE Rank O Y Range 70-140 120-240 Marking NO NY |
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