MP6301

2002-11-20

1

TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 6 in 1)

MP6301

High Power Switching Applications

3-Phase Motor Drive and Bipolar Drive of Pulse Motor

· Small package by full molding (SIP 12 pin)

· High collector power dissipation (6 devices operation)

Rating

Characteristics

Symbol

NPN

PNP

Unit

Collector-base voltage

100

−100

V

Collector-emitter voltage

80

−80

V

Emitter-base voltage

8

−8

V

DC

3

−3

Collector current

Pulse

5

−5

A

Continuous base current

0.5

−0.5

A

Collector power dissipation

(1 device operation)

2.0

W

Collector power dissipation

(6 devices operation)

4.4

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Array Configuration

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-32C1F

Weight: 3.9 g (typ.)

2

1

R1 R2

11

R1 ≈ 4.5 kΩ, R2 ≈ 300 Ω

5

8

10

7

4

3

6

9

12

R1 R2