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620TG Datasheet(PDF) 2 Page - ON Semiconductor |
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620TG Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 4 page ![]() MURD620CT http://onsemi.com 2 THERMAL CHARACTERISTICS (Per Diode) Rating Symbol Value Unit Thermal Resistance − Junction−to−Case RqJC 9 °C/W Thermal Resistance − Junction−to−Ambient (Note 1) RqJA 80 °C/W ELECTRICAL CHARACTERISTICS (Per Diode) Maximum Instantaneous Forward Voltage Drop (Note 2) (iF = 3 Amps, TC = 25°C) (iF = 3 Amps, TC = 125°C) (iF = 6 Amps, TC = 25°C) (iF = 6 Amps, TC = 125°C) vF 1 0.96 1.2 1.13 V Maximum Instantaneous Reverse Current (Note 2) (TJ = 25°C, Rated dc Voltage) (TJ = 125°C, Rated dc Voltage) iR 5 250 mA Maximum Reverse Recovery Time (IF = 1 Amp, di/dt = 50 Amps/ms, VR = 30 V, TJ = 25°C) (IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 A, VR = 30 V, TJ = 25°C) trr 35 25 ns 1. Rating applies when surface mounted on the minimum pad sizes recommended. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. Figure 1. Typical Forward Voltage (Per Leg) vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 0.6 0.2 0.8 30 0.1 0.3 0.2 2.0 1.0 100 20 7.0 3.0 0.5 5.0 50 1.4 VR, REVERSE VOLTAGE (VOLTS) 060 40 100 120 100 0.01 0.001 1.0 10 TJ = 175°C 20 80 200 Figure 2. Typical Leakage Current* (Per Leg) IF(AV), AVERAGE FORWARD CURRENT (AMPS) 0 3.0 2.0 0 2.0 1.0 3.0 5.0 4.0 14 7.0 6.0 1.0 10 Figure 3. Average Power Dissipation (Per Leg) 0.4 0.7 10 70 1.0 1.2 100 °C TJ = 25°C 175 °C 160 180 140 0.1 100 °C 25 °C 6.0 5.0 4.0 9.0 8.0 7.0 9.0 8.0 * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficiently below rated VR. 150 °C 11 10 13 12 TJ = 175°C IPK/IAV = 20 SINE WAVE SQUARE WAVE dc 10 5.0 150 °C |
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