STPSC1006 datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STPSC1006

Description	Particularly suitable in PFC boost diode function

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 8 page

November 2010

Doc ID 16287 Rev 3

1/8

8

STPSC1006

600 V power Schottky silicon carbide diode

Features

■ No or negligible reverse recovery

■ Switching behavior independent of

temperature

■ Particularly suitable in PFC boost diode

function

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide band gap material

allows the design of a Schottky diode structure

with a 600 V rating. Due to the Schottky

construction no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

ST SiC diodes will boost the performance of PFC

operations in hard switching conditions.

Table 1.

Device summary

IF(AV)

10 A

VRRM

600 V

Tj (max)

175 °C

QC (typ)

12 nC

K

A

K

A

NC

TO-220AC

STPSC1006D

D2PAK

STPSC1006G

www.st.com

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STPSC1006 Datasheet(PDF) 1 Page - STMicroelectronics

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