STTH8S12 datasheet(2/8 Pages) STMICROELECTRONICS

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Characteristics

STTH8S12

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DocID026655 Rev 1

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.7 x IF(AV) + 0.1 IF

(RMS)

Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

1200

IF(RMS) Forward rms current

IF(AV)

Average forward current,

δ = 0.5

Tc = 110 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

Tstg

Storage temperature range

-65 to +175

°C

Maximum operating junction temperature

175

°C

Table 3. Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

2.3

°C/W

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 150 °C

200

(2)

Forward voltage drop

Tj = 25 °C

IF = 8 A

2.7

Tj = 150 °C

1.75

2.5

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ. Max. Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 1 A, VR = 30 V,

dIF/dt = 200 A/µs

IRM

Reverse recovery current

Tj = 125 °C

IF = 8 A, VR = 600 V,

dIF/dt = 200 A/µs

Softness factor

QRR

Reverse recovery charge

800

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