STTH8ST06 datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Characteristics

STTH8ST06

4/9

DocID024150 Rev 2

Figure 5. Reverse recovery time versus dIF/dt

(typical values)

Figure 6. Reverse recovery charges versus

dIF/dt (typical values)

RR(nC)

100

200

300

400

500

600

700

800

900

1000

R=400 V

j=125 °C

F=0.5 x IF(AV)

F=IF(AV)

F=2 x IF(AV)

dIF/dt(A/µs)

Figure 7. Reverse recovery softness factor

versus dIF/dt (typical values)

Figure 8. Relative variations of dynamic

parameters versus junction temperature

FACTOR

0.0

0.2

0.4

0.6

0.8

1.0

1.2

100

200

300

400

500

600

700

800

900

1000

dIF/dt(A/µs)

F=IF(AV)

R=400 V

j=125 °C

dIF/dt(A/µs)

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

100

125

IF=IF(AV)

VR=400 V

Reference: Tj=125 °C

IRM

SFACTOR

QRR

Tj(°C)

Figure 9. Junction capacitance versus reverse

voltage applied (typical values)

Figure 10. Relative variation of non-repetitive

peak surge forward current versus pulse

duration

C(pF)

100

1000

F=1 MHz

OSC=30 mVRMS

j=25 °C

R (V)

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.1

1.0

10.0

(t )/I

(10ms)

FSM

t(ms)

sinusoidal waveform

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