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STW6N90K5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STW6N90K5 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page  November 2016 DocID029951 Rev 1 1/12 This is information on a product in full production. www.st.com STW6N90K5 N- channel 900 V, 0.91 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a TO-247 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STW6N90K5 900 V 1.10 Ω 6 A Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STW6N90K5 6N90K5 TO-247 Tube TO-247 1 2 3 AM15572v1_no_tab D(2) G(1) S(3) |
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