STW8N90K5 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STW8N90K5

4/12

DocID030092 Rev 1

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 5: On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

900

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 900 V

µA

VGS = 0 V, VDS = 900 V,

TC = 125 °C(1)

µA

IGSS

Gate body leakage current

VDS = 0 V, VGS = ±20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 4 A

0.60

0.68

Ω

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

426

Coss

Output capacitance

Crss

Reverse transfer capacitance

1.2

Co(tr)(1)

Equivalent capacitance time

VDS = 0 to 720 V,

VGS = 0 V

Co(er)(2)

Equivalent capacitance energy

Intrinsic gate resistance

f = 1 MHz , ID= 0 A

Ω

Total gate charge

VDD = 720 V, ID = 8 A,

VGS= 10 V

(see Figure 15: "Test

circuit for gate charge

behavior")

Qgs

Gate-source charge

3.5

Qgd

Gate-drain charge

4.8

Notes:

(1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

(2)Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when

VDS increases from 0 to 80% VDSS

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