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2SC3052 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC3052 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 4 page ![]() Production specification Silicon Epitaxial Planar Transistor 2SC3052 C159 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 6 V Collector cut-off current ICBO VCB=50V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=6V,IC=0 0.1 μA DC current gain hFE VCE=6V,IC=1mA VCE=6V,IC=0.1mA 150 90 800 Collector to Emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V Collector output capacitance Cob VCB=6V,IE=0,f=1MHz 2.5 pF Transition frequency fT VCE=6V, IC= 10mA 200 MHz Noise Figure NF VCE=6V,IE=0.1mA, f=1kHz,RG=2kΩ 20 dB CLASSIFICATION OF hFE Rank E F G Range 150-300 250-500 400-800 Marking LE LF LG TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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