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2SC3125 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC3125 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 3 page ![]() Production specification Silicon Epitaxial Planar Transistor 2SC3125 C185 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 25 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=3V,IC=0 0.1 μA DC current gain hFE VCE=10V,IC=10mA 20 70 200 Collector-emitter saturation voltage VCE(sat) IC=15mA, IB=1.5mA 0.2 V Base-emitter saturation voltage VBE(sat) IC=15mA, IB=1.5mA 1.5 V Transition frequency fT VCE=10V, IC= 10mA 250 600 MHz Collector-base output capacitance Cob VCB=10V, IE=0,f=1MHz 1.1 1.6 MHz TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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