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2SD596 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Part # 2SD596
Description  Silicon Epitaxial Planar Transistor
PDF  4 Pages
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Manufacturer  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

2SD596 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

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Production specification
Silicon Epitaxial Planar Transistor
2SD596
C024
www.gmicroelec.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
30
V
Collector-emitter breakdown
voltage
V(BR)CEO
IC=1mA,IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=30V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
DC current gain
hFE
VCE=1V,IC=100mA
VCE=1V,IC=700mA
110
50
200
400
Collector-emitter saturation voltage
VCE(sat)
IC=700mA, IB=70mA
0.22
0.6
V
Base to Emitter voltage
VBE
VCE=6V,IC=10mA
600
640
700
mV
Transition frequency
fT
VCE=6V, IE= -10mA
170
MHz
Output capacitance
Cob
VCB=6V, IE=0,f=10kHz
12
pF
CLASSIFICATION OF hFE(1)
Range
110-180
135-220
170-270
200-320
250-400
Marking
DV1
DV2
DV3
DV4
DV5



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