STB6N62K3 datasheet(1/19 Pages) STMICROELECTRONICS

Part #	STB6N62K3

Description	Very low intrinsic capacitance

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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December 2011

Doc ID 022605 Rev 1

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19

STB6N62K3

STD6N62K3

N-channel 620 V, 0.95

Ω, 5.5 A SuperMESH3™ Power MOSFET

in D²PAK, DPAK

Features

■ 100% avalanche tested

■ Extremely high dv/dt capability

■ Gate charge minimized

■ Very low intrinsic capacitance

■ Improved diode reverse recovery

characteristics

■ Zener-protected

Applications

■ Switching applications

Description

These SuperMESH3™ Power MOSFETs are the

result of improvements applied to

STMicroelectronics’ SuperMESH™ technology,

combined with a new optimized vertical structure.

These devices boast an extremely low on-

resistance, superior dynamic performance and

high avalanche capability, rendering them suitable

for the most demanding applications.

Figure 1.

Internal schematic diagram

Order codes

VDSS

RDS(on)

max.

ID

Pw

STB6N62K3

STD6N62K3

620 V

< 1.2

Ω

5.5 A

90 W

DPAK

D²PAK

1

3

TAB

1

3

TAB

D(2,TAB)

G(1)

S(3)

AM01476v1

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STB6N62K3

STD6N62K3

6N62K3

D²PAK

DPAK

Tape and reel

www.st.com

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STB6N62K3 Datasheet(PDF) 1 Page - STMicroelectronics

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