STU5N95K5 datasheet(4/26 Pages) STMICROELECTRONICS

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Electrical characteristics

STD5N95K5, STF5N95K5, STP5N95K5,

STU5N95K5

4/26

DocID024639 Rev 4

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 5: On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

950

IDSS

Zero gate voltage drain current

VDS = 950 V, VGS = 0 V

µA

VDS = 950 V, VGS = 0 V

TC = 125 °C(1)

µA

IGSS

Gate body leakage current

VGS = ±20 V, VDS = 0 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 1.5 A

2.5

Ω

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

220

Coss

Output capacitance

Crss

Reverse transfer capacitance

Co(tr)(1)

Equivalent capacitance time

VGS = 0 V,

VDS = 0 to 760 V

Co(er)(2)

Equivalent capacitance energy

Intrinsic gate resistance

f = 1 MHz open drain

Ω

Total gate charge

VDD = 760 V, ID = 3.5 A

VGS= 10 V

(see Figure 19: "Test

circuit for gate charge

behavior")

12.5

Qgs

Gate-source charge

Qgd

Gate-drain charge

Notes:

(1)Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to

80% VDSS.

(2)Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to

80% VDSS.

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