This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

May 2014

DocID026376 Rev 1

1/21

STD11N65M2, STP11N65M2,

STU11N65M2

N-channel 650 V, 0.6

Ω typ., 7 A MDmesh II Plus™ low Q

g

Power MOSFETs in DPAK, TO-220 and IPAK packages

Figure 1. Internal schematic diagram

Features

• Extremely low gate charge

• Lower R

DS(on)

x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

Description

These devices are N-channel Power MOSFETs

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Qg. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters.

AM01476v1

DPAK

IPAK

TO-220

1

3

TAB

1

2

3

TAB

3

2

1

TAB

Order codes

STD11N65M2

650 V

0.67

Ω

7 A

STP11N65M2

STU11N65M2

Table 1. Device summary

Order codes

Marking

Package

Packaging

STD11N65M2

11N65M2

DPAK

Tape and reel

STP11N65M2

TO-220

Tube

STU11N65M2

IPAK

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