STD25N10F7 datasheet(4/21 Pages) STMICROELECTRONICS

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Electrical characteristics

STD25N10F7, STF25N10F7, STP25N10F7

4/21

DocID025265 Rev 1

Electrical characteristics

CASE

= 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(BR)DSS

Drain-source breakdown

voltage (V

= 0)

= 250 μA

100

DSS

Zero gate voltage drain

current (V

= 0)

= 100 V

= 100 V; T

= 125 °C

100

μA

GSS

Gate body leakage current

= 0)

= ± 20 V

±100

GS(th)

Gate threshold voltage

= V

, I

= 250 μA2.5

4.5

DS(on)

Static drain-source

on- resistance

= 10 V, I

= 12.5 A

0.027

0.035

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

iss

Input capacitance

= 50 V, f = 1 MHz,

= 0

-920

oss

Output capacitance

215

rss

Reverse transfer

capacitance

-19

Total gate charge

= 50 V, I

= 25 A

= 10 V

Figure 18

-14

Gate-source charge

Gate-drain charge

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