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STD45P4LLFAG Datasheet(PDF) 3 Page - STMicroelectronics |
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STD45P4LLFAG Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 16 page ![]() STD45P4LLF6AG Electrical ratings DocID027807 Rev 2 3/16 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage -40 V VGS Gate-source voltage ±18 V V ID Drain current (continuous) at Tcase = 25 °C -50 A Drain current (continuous) at Tcase = 100 °C -31 IDM(1) Drain current (pulsed) -200 A PTOT Total dissipation at Tcase = 25 °C 58 W EAS(2) Single pulse avalanche energy 160 mJ Tstg Storage temperature –55 to 150 °C Tj(3) Operating junction temperature Notes: (1) Pulse width is limited by safe operating area. (2) starting Tj = 25 °C, RG = 47 Ω, ID(min) = -25 A. (3) HTRB performed at Tj = 175 °C, VDS = 100% V(BR)DSS. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 2.14 °C/W Rthj-amb Thermal resistance junction-ambient 50 |
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