STDLED623 datasheet(3/18 Pages) STMICROELECTRONICS

3 / 18 page

DocID025178 Rev 1

3/18

STDLED623, STULED623

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

620

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25 °C

3.0

Drain current (continuous) at TC = 100 °C

3.0

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-repetitive (pulse width

limited by Tj max.)

0.36

W/°C

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID =

IAR, VDD = 50 V)

dv/dt(2)

ISD ≤ 2.2 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all three leads to

external heat sink

(t = 1 s; T

C = 25 °C)

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

DPAK

IPAK

Rthj-case

Thermal resistance junction-case max.

2.78

6.25

°C/W

Rthj-pcb

(1)

When mounted on 1 inch² FR-4 board, 2 oz Cu.

Thermal resistance junction-pcb max.

°C/W

Rthj-amb

Thermal resistance junction-amb max.

100

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Max. value

Unit

IAR

Avalanche current, repetitive or not-repetitive (pulse width

limited by Tj max.)

2.7

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

100

Obsolete

Product(s)

- Obsolete

Product(s)

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