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STF10N60M2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STF10N60M2 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page  March 2017 DocID024712 Rev 4 1/13 This is information on a product in full production. www.st.com STF10N60M2 N- channel 600 V, 0.55 Ω typ., 7.5 A MDmesh™ M2 Power MOSFET in a TO-220FP package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS@TJmax. RDS(on) max. ID STF10N60M2 650 V 0.60 Ω 7.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STF10N60M2 10N60M2 TO-220FP Tube TO-220FP AM15572v1_no_tab D(2) G(1) S(3) |
Similar Part No. - STF10N60M2 |
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Similar Description - STF10N60M2 |
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