STF12N50DM2 datasheet(3/13 Pages) STMICROELECTRONICS

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STF12N50DM2

Electrical ratings

DocID026809 Rev 2

3/13

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

ID(1)

Drain current (continuous) at TC = 25 °C

ID(1)

Drain current (continuous) at TC= 100 °C

IDM(2)

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

dv/dt (3)

Peak diode recovery voltage slope

V/ns

dv/dt (4)

MOSFET dv/dt ruggedness

V/ns

VISO

Insulation withstand voltage (RMS) from all three leads to

external heat sink (t = 1 s, TC = 25 °C)

2500

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

Notes:

(1)Limited by maximum junction temperature.

(2)Pulse width limited by safe operating area.

(3) ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS

(4) VDS ≤ 400 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetetive or not repetetive

(pulse width limited by Tjmax)

2.5

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR,

VDD = 50 V)

320

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