RN1114~RN1118

2001-06-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1114,RN1115,RN1116,RN1117,RN1118

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors.

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN2114~2118

Equivalent Circuit and Bias Resistor Values

°°°°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1114~1118

50

V

RN1114

5

RN1115

6

RN1116

7

RN1117

15

Emitter-base voltage

RN1118

25

V

Collector current

100

mA

Collector power dissipation

100

mW

Junction temperature

150

°C

Storage temperature range

RN1114~1118

−55~150

°C

JEDEC

―

EIAJ

―

TOSHIBA

2-2H1A

Weight: 2.4mg

Type No.

RN1114

1

10

RN1115

2.2

10

RN1116

4.7

10

RN1117

10

4.7

RN1118

47

10

Unit: mm