RN2101

~RN2106

2001-06-07

1

Type No.

R1 (kΩ)

R2 (kΩ)

RN2101

4.7

4.7

RN2102

10

10

RN2103

22

22

RN2104

47

47

RN2105

2.2

47

RN2106

4.7

47

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2101,RN2102,RN2103

RN2104,RN2105,RN2106

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1101~RN1106

Equivalent Circuit and Bias Resister Values

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

RN2101~2106

−50

V

RN2101~2104

−10

Emitter-base voltage

RN2105, 2106

−5

V

Collector current

−100

mA

Collector power dissipation

100

mW

Junction temperature

150

°C

Storage temperature range

RN2101~2106

−55~150



°C

JEDEC

―

EIAJ

―

TOSHIBA

2-2H1A

Weight: 2.4mg

Unit: mm