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2SC2715 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Part # 2SC2715
Description  Silicon Epitaxial Planar Transistor
PDF  3 Pages
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Manufacturer  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

2SC2715 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

  2SC2715 Datasheet HTML 1Page - Galaxy Semi-Conductor Holdings Limited 2SC2715 Datasheet HTML 2Page - Galaxy Semi-Conductor Holdings Limited 2SC2715 Datasheet HTML 3Page - Galaxy Semi-Conductor Holdings Limited  
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Production specification
Silicon Epitaxial Planar Transistor
2SC2715
C099
www.gmicroelec.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector cut-off current
ICBO
VCB=35V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.1
μA
DC current gain
hFE
VCE=12V,IC=2mA
40
240
Collector-emitter saturation voltage
VCE(sat)
IC=10mA, IB=1mA
0.4
V
Base-emitter voltage
VBE
IC=10mA, IB=1mA
1
V
Transition frequency
fT
VCE=10V, IC= 1mA
100
400
MHz
Collector-base output capacitance
Cob
VCB=10V, IE=0,f=1MHz
2.0
3.2
pF
Collector-base time constant
CC.rbb
VCE=10V,
IE=-1mA,f=30MHz
50
ps
Power Gain
Gpe
VCC=6V,
IE=-1mA,f=10.7MHz
27
30
33
dB
CLASSIFICATION OF hFE(1)
Rank
R
O
Y
Range
40-80
70-140
120-240
Marking
RR1
RO1
RY1
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified



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