| Electronic Components Datasheet Search |
|
STAC2932F Datasheet(PDF) 1 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STAC2932F Datasheet(HTML) 1 Page - STMicroelectronics |
|
1 / 14 page ![]() January 2012 Doc ID 17120 Rev 3 1/14 14 STAC2932F RF power transistor HF/VHF/UHF RF power N-channel MOSFETs Features ■ Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive ■ ST air cavity packaging technology - STAC™ package Description The STAC2932F is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz. The STAC2932F benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC™. Figure 1. Pin connection STAC244F Air cavity 1. Drain 2. Gate 3. Source (Bottom side) 1 1 2 2 3 Table 1. Device summary Order code Marking Base qty. Package Packaging STAC2932FW STAC2932F(1) 20 STAC244F Tray 1. For more details please refer to Chapter 7: Marking, packing and shipping specifications. www.st.com |
Similar Part No. - STAC2932F |
|
Similar Description - STAC2932F |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |