STD8NF25 datasheet(4/14 Pages) STMICROELECTRONICS

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Electrical characteristics

STD8NF25

4/14

Doc ID 018593 Rev 1

Electrical characteristics

(TCASE=25 °C unless otherwise specified).

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

250

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 250 V

VDS = 250 V, Tc=125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS= 10 V, ID= 8 A

318

420

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz, VGS=0

500

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 200 V, ID = 8 A

VGS =10 V

(see Figure 14)

3.5

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD=125 V, ID=4 A,

RG=4.7 Ω, VGS=10 V

(see Figure 13 and

Figure 18)

td(off)

Turn-off delay time

Fall time

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