STFH10N60M2 datasheet(5/12 Pages) STMICROELECTRONICS

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STFH10N60M2

Electrical characteristics

DocID029418 Rev 3

5/12

Table 8: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD(1)

Source-drain

current

7.5

ISDM(1)(2)

Source-drain

current (pulsed)

VSD(3)

Forward on

voltage

ISD = 7.5 A, VGS = 0 V

1.6

trr

Reverse

recovery time

ISD = 7.5 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 16: "Test circuit

for inductive load switching and diode

recovery times")

270

Qrr

Reverse

recovery charge

µC

IRRM

Reverse

recovery current

14.4

trr

Reverse

recovery time

ISD = 7.5 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 16: "Test circuit for inductive

load switching and diode recovery

times")

376

Qrr

Reverse

recovery charge

2.8

µC

IRRM

Reverse

recovery current

Notes:

(1)Limited by maximum junction temperature.

(2)Pulse width limited by safe operating area.

(3)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

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