STFH24N60M2 datasheet(5/12 Pages) STMICROELECTRONICS

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STFH24N60M2

Electrical characteristics

DocID029415 Rev 2

5/12

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 9 A,

= 4.7 Ω, VGS = 10 V

(see Figure 14: "Test circuit for

resistive load switching times" and

Figure 19: "Switching time waveform")

Rise time

td(off)

Turn-off delay time

Fall time

Table 8: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD(1)

Source-drain

current

ISDM(1)(2)

Source-drain

current (pulsed)

VSD(3)

Forward on voltage

ISD = 18 A, VGS = 0 V

1.6

trr

Reverse recovery

time

ISD = 18 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 16: "Test

circuit for inductive load switching

and diode recovery times")

332

Qrr

Reverse recovery

charge

µC

IRRM

Reverse recovery

current

trr

Reverse recovery

time

ISD = 18 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 16: "Test circuit for

inductive load switching and diode

recovery times")

450

Qrr

Reverse recovery

charge

5.5

µC

IRRM

Reverse recovery

current

Notes:

(1)The value is rated according to Rthj-case and limited by package.

(2)Pulse width limited by safe operating area

(3)Pulsed: pulse duration = 300 µs, duty cycle 1.5%

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